Kanhao Xue
Laboratoire de Réactivité et Chimie des Solides (LRCS)
Université de Picardie Jules Verne
33 Rue Saint Leu, 80039 Amiens Cedex, France

Email: xuekanhao at


Education Background

Ph. D. Electrical Engineering, University of Colorado, Colorado Springs (USA) 2010
M. S. Microelectronics, Tsinghua University (Beijing, China) 2007
B. S. Electronics Engineering, Tsinghua University (Beijing, China) 2004


Research Experience

'13-Now Modeling and experimental research on lithium air battery
'11-'13 Modeling of Resistance Random Access Memory
  Joint research by LETI, IMEP and Stanford University
'10-'11 Modeling of Lithium Ion Battery
  University of Colorado and National Semiconductor Corp
'07-'10 Device physics of Resistance Random Access Memory
  Model published by J. Appl. Phys.
'07-'09 Search for low temperature ferroelectric materials
  Results published by Appl. Phys. Lett. and J. Appl. Phys.
'06-'07 Study on FeDRAM based novel memory materials
  Ying Tong Education Foundation, China
  Natural Science Foundation, China
'05 Preparation and application of novel NiO-based high permittivity
  thin films (In charge of device fabricartion)
  863 National Plan, China
'05-'07 New generation embedded ferroelectric material, device and
  compatible process for SOC applications
  Natural Science Foundation, China

1024×768 Resolution Recommended. © 2010-2011 Kanhao Xue